Shastin, V. N.

Institute for Physics of Semiconductors
Russia, N.Novgorod

Report

• Pavlov S.G.^*, Abrosimov N.V.^**, Deßmann N.^***, Böttger U.^*, Redlich B.^****, van der Meer A.^****, Zhukavin R.Kh.^*****, Shastin V.N.^*****, Irmscher K.^**, Riemann H.^**
  Interplay of inversion-less and inversion-based terahertz stimulated intracenter emission in isotopically enriched silicon doped by bismuth
  ^*Institute of Planetary Research, German Aerospace Center (Berlin), Germany
  ^**Leibniz Institute of Crystal Growth (Berlin), Germany
  ^***Institut für Optik und Atomäre Physik, Technische Universität Berlin (Berlin), Germany
  ^****FELIX Facility, Radboud University (Nijmegen), The Netherlands
  ^*****Institute for Physics of Semiconductors (N.Novgorod), Russia
  

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