Pchelyakov, Oelg Petrovitch
Deputy Director on science, D.Sc. in Physics and Mathematics
A.V. Rzhanov Institute of Semiconductor Physics of SB RAS
http://www.isp.nsc.ru/
Russia, 630090, Novosibirsk, Ac. Lavrentiev Ave, 13
Phone: +7(383) 333-27-66,
Fax: +7(383) 333-27-71
Reports list
- Pchelyakov O.P.*
Molecular beam epitaxy of heterostructures GaAs on Si for photovoltaic
*A.V. Rzhanov Institute of Semiconductor Physics of SB RAS (Novosibirsk), Russia
- Nikiforov A.*, Tomofeev V.A.*, Tyes S.*, Pchelyakov O.P.*
Surface structure of thin pseudomorphological GeSi films
*A.V. Rzhanov Institute of Semiconductor Physics of SB RAS (Novosibirsk), Russia
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