Hikavyy, Andriy

Report

• Zyulkov I.J.^*, Hikavyy A.^**
  Strained SiGe layers growth with digermane/disilane precursors combination
  ^*ОАО "Научно исследовательский институт молекулярной электроники" (Moscow), Russia
  ^**Interuniversity Microelectronics Centre (IMEC) (Лёвен), Belgium