Tomofeev, Vyacheslav Alekseevich
A.V. Rzhanov Institute of Semiconductor Physics of SB RAS
http://www.isp.nsc.ru/
Russia, 630090, Novosibirsk, Ac. Lavrentiev Ave, 13
Phone: +7(383) 333-27-66, Fax: +7(383) 333-27-71
Report
- Nikiforov A.*, Tomofeev V.A.*, Tyes S.*, Pchelyakov O.P.*
Surface structure of thin pseudomorphological GeSi films
*A.V. Rzhanov Institute of Semiconductor Physics of SB RAS (Novosibirsk), Russia