Novosibirsk, Russia, May, 30 – June, 4, 2011

"Modern Problems of Applied Mathematics and Mechanics: Theory, Experiment and Applications", devoted to the 90th anniversary of professor Nikolai N. Yanenko

## Zhukov V.P. Федорук М.П.## One-parameter 6-kp model for hetero nano structures## Reporter: Zhukov V.P.6-kp model is widely used to describe semiconductor structures. Initially this model was suggested for the materials with constant effective masses. But the contact of materials with strongly different masses is a common for the semiconductor structures. This demands the generalization of 6-kp model on this case. In previous papers the heterotransition is assumed sharp and the condition of wave function continuity and linear connections between the derivatives are used. This approach has the following disadvantages. 1. uncertainty of the connection coefficients, 2. It is impossible to use this approach in the case of smooth (diffusive) heterotransition, 3. there are difficulties in the case of heterostrucrures of complicated form and the case of a contact of more then 2. There are also nonphysical solutions (interface mode) for a certain boundary conditions.
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